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| PBSS2515E 15 V, 0.5 A NPN low VCEsat (BISS) transistor Rev. 01 -- 18 April 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. PNP complement: PBSS3515E. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications s s s s s s DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e.g. motors, fans) Portable applications 1.4 Quick reference data Table 1: VCEO IC ICM RCEsat [1] Quick reference data Conditions open base single pulse; tp 1 ms IC = 500 mA; IB = 50 mA [1] Symbol Parameter collector-emitter voltage collector current (DC) peak collector current collector-emitter saturation resistance Min - Typ 300 Max 15 0.5 1 500 Unit V A A m Pulse test: tp 300 s; 0.02. Philips Semiconductors PBSS2515E 15 V, 0.5 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2: Pin 1 2 3 Pinning Description base emitter collector 1 2 3 1 2 sym021 Simplified outline Symbol 3 3. Ordering information Table 3: Ordering information Package Name PBSS2515E SC-75 Description plastic surface mounted package; 3 leads Version SOT416 Type number 4. Marking Table 4: Marking codes Marking code 1Q Type number PBSS2515E 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tj Tamb Tstg [1] [2] 9397 750 14877 Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation junction temperature ambient temperature storage temperature Conditions open emitter open base open collector single pulse; tp 1 ms single pulse; tp 1 ms Tamb 25 C [1] [2] Min -65 -65 Max 15 15 6 0.5 1 100 150 250 150 +150 +150 Unit V V V A A mA mW mW C C C Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 18 April 2005 2 of 11 Philips Semiconductors PBSS2515E 15 V, 0.5 A NPN low VCEsat (BISS) transistor 300 Ptot (mW) (1) 006aaa412 200 (2) 100 0 0 40 80 120 160 Tamb (C) (1) FR4 PCB, mounting pad for collector 1 cm2 (2) FR4 PCB, standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 6: Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air [1] [2] Min - Typ - Max 833 500 Unit K/W K/W [1] [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. 9397 750 14877 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 18 April 2005 3 of 11 Philips Semiconductors PBSS2515E 15 V, 0.5 A NPN low VCEsat (BISS) transistor 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.5 0.33 0.2 0.1 0.05 0.02 10 0.01 0 0.75 006aaa413 1 10-5 10-4 10-3 10-2 10-1 1 10 102 t p (s) 103 FR4 PCB, mounting pad for collector 1 cm2 Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 7. Characteristics Table 7: Characteristics Tamb = 25 C unless otherwise specified. Symbol ICBO Parameter collector-base cut-off current emitter-base cut-off current DC current gain Conditions VCB = 15 V; IE = 0 A VCB = 15 V; IE = 0 A; Tj = 150 C VEB = 5 V; IC = 0 A VCE = 2 V; IC = 10 mA VCE = 2 V; IC = 100 mA VCE = 2 V; IC = 500 mA VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA IC = 200 mA; IB = 10 mA IC = 500 mA; IB = 50 mA RCEsat VBEsat VBEon fT Cc collector-emitter saturation resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance Pulse test: tp 300 s; 0.02. [1] [1] [1] [1] Min 200 150 90 250 - Typ 300 420 4.4 Max 100 50 100 25 150 250 500 1.1 0.9 6 Unit nA A nA IEBO hFE mV mV mV m V V MHz pF IC = 500 mA; IB = 50 mA IC = 500 mA; IB = 50 mA VCE = 2 V; IC = 100 mA VCE = 5 V; IC = 100 mA; f = 100 MHz VCB = 10 V; IE = ie = 0 A; f = 1 MHz [1] [1] [1] 9397 750 14877 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 18 April 2005 4 of 11 Philips Semiconductors PBSS2515E 15 V, 0.5 A NPN low VCEsat (BISS) transistor 800 hFE 600 (1) 006aaa364 1100 VBE (mV) 900 (1) 006aaa365 (2) 700 (2) 400 500 (3) (3) 200 300 0 10-1 1 10 102 IC (mA) 103 100 10-1 1 10 102 IC (mA) 103 VCE = 2 V (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C VCE = 2 V (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C Fig 3. DC current gain as a function of collector current; typical values 1 VCEsat (mV) 10-1 006aaa366 Fig 4. Base-emitter voltage as a function of collector current; typical values 1 VCEsat (mV) 10-1 006aaa367 (1) 10-2 (1) (2) (3) 10-2 (2) (3) 10-3 10-1 1 10 102 IC (mA) 103 10-3 10-1 1 10 102 IC (mA) 103 IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C Tamb = 25 C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values Fig 6. Collector-emitter saturation voltage as a function of collector current; typical values 9397 750 14877 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 18 April 2005 5 of 11 Philips Semiconductors PBSS2515E 15 V, 0.5 A NPN low VCEsat (BISS) transistor 1.3 VBEsat (V) 0.9 (1) (2) (3) 006aaa368 102 RCEsat () 10 006aaa369 0.5 1 (1) (2) (3) 0.1 10-1 1 10 102 IC (mA) 103 10-1 10-1 1 10 102 IC (mA) 103 IC/IB = 20 (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C Fig 7. Base-emitter saturation voltage as a function of collector current; typical values 1.2 IC (A) 0.8 006aaa370 Fig 8. Collector-emitter saturation resistance as a function of collector current; typical values 103 RCEsat () 102 006aaa371 IB = 5.0 mA 4.5 4.0 3.5 3.0 2.5 2.0 1.5 0.4 1.0 (1) 10 (2) 1 0.5 (3) 0 0 1 2 3 4 VCE (V) 5 10-1 10-1 1 10 102 IC (mA) 103 Tamb = 25 C Tamb = 25 C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig 9. Collector current as a function of collector-emitter voltage; typical values Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values 9397 750 14877 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 18 April 2005 6 of 11 Philips Semiconductors PBSS2515E 15 V, 0.5 A NPN low VCEsat (BISS) transistor 8. Package outline 1.8 1.4 3 0.45 0.15 0.95 0.60 1.75 0.9 1.45 0.7 1 2 0.30 0.15 1 0.25 0.10 04-11-04 Dimensions in mm Fig 11. Package outline SOT416 (SC-75) 9. Packing information Table 8: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number PBSS2515E [1] Package SOT416 Description 4 mm pitch, 8 mm tape and reel Packing quantity 3000 -115 10000 -135 For further information and the availability of packing methods, see Section 15. 9397 750 14877 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 18 April 2005 7 of 11 Philips Semiconductors PBSS2515E 15 V, 0.5 A NPN low VCEsat (BISS) transistor 10. Soldering 2.20 0.60 1.10 0.70 solder lands 2 2.00 0.85 3 1 0.50 (3x) MSA438 solder resist 1.50 occupied area solder paste 0.60 (3x) 1.90 Dimensions in mm Fig 12. Reflow soldering footprint 3.80 3.30 0.70 solder lands solder resist 2.85 1.50 0.80 2.10 occupied area MSA418 preferred transport direction during soldering Dimensions in mm Fig 13. Wave soldering footprint 9397 750 14877 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 18 April 2005 8 of 11 Philips Semiconductors PBSS2515E 15 V, 0.5 A NPN low VCEsat (BISS) transistor 11. Revision history Table 9: Revision history Release date 20050418 Data sheet status Product data sheet Change notice Doc. number 9397 750 14877 Supersedes Document ID PBSS2515E_1 9397 750 14877 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 18 April 2005 9 of 11 Philips Semiconductors PBSS2515E 15 V, 0.5 A NPN low VCEsat (BISS) transistor 12. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 14. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 15. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 14877 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 18 April 2005 10 of 11 Philips Semiconductors PBSS2515E 15 V, 0.5 A NPN low VCEsat (BISS) transistor 16. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information. . . . . . . . . . . . . . . . . . . . . . 7 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information . . . . . . . . . . . . . . . . . . . . 10 (c) Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 18 April 2005 Document number: 9397 750 14877 Published in The Netherlands |
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